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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK1705 description drain current i d = 10a@ t c =25 drain source voltage- : v dss = 500v(min) fast switching speed applications power supplies, converters and power motor controls absolute maximum ratings(t a =25 ) symbol parameter value unit v dss drain-source voltage (v gs =0) 500 v v gs gate-source voltage 30 v i d drain current-continuous@ t c =25 10 a p tot total dissipation@t c =25 125 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK1705 electrical characteristics (t c =25 ) symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 1ma 500 v v gs (th ) gate threshold voltage v ds = v gs ; i d =1ma 2 4 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 5a 0.9 i gss gate-body leakage current v gs = 30v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 500v; v gs = 0 1 ma pdf pdffactory pro www.fineprint.cn |
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